Fairchild FQP13N10 Replacement N-Channel MOSFET RF Transistor.
Key Specifications:
According to datasheets from various electronics vendors, including Fairchild and onsemi, the following are the primary characteristics of the FQP13N10:
- Drain-Source Voltage (Vdss): 100 V
- Continuous Drain Current (Id): 12.8 A (at Tc = 25°C)
- Pulsed Drain Current (Idm): 51.2 A
- Gate-Source Voltage (Vgss): ±25 V
- Power Dissipation (Pd): 65 W (at Tc = 25°C)
- On-State Resistance (Rds(on)): 180 mΩ (max) at Vgs = 10 V, Id = 6.4 A
- Package Type: TO-220AB
Package:
1x FQP13N10 MOSFET RF Power Transistor